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Mechanism for bistability in organic memory elements
We demonstrate that the resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles conforms to a charge storage mechanism described by Simmons and Verderber @Proc. R. Soc. A 391, 77 ~1967!#. The space-charge field due to the stored charge inhibits further charge injection from the electrodes. The equilibrium current–voltage curve is N shaped and ...
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ژورنال
عنوان ژورنال: Nature
سال: 1948
ISSN: 0028-0836,1476-4687
DOI: 10.1038/161079b0